Overview: XPTTM 650V IGBT GenX3TM
Ultra Low-Vsat PT IGBT IXYK300N65A3 IXYX300N65A3 VCES = IC110 = V CE(sat) tfi(typ) = 650V 300A
1.60V 160ns Symbol
VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md FC
Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive
TC = 25°C 600 A 160 A 300 A 1460 A 100 A 2 J ICM = 600 A @VCE VCES 8 μs 2300 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Torque (TO-264) 1.13/10 Mounting Force (PLUS247) 20..120 /4.5..27 °C °C Nm/lb.in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 3.5 5.0 V 25 μA 1 mA ±200 nA 1.32 1.35 1.
