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IXYX50N170C - High Voltage IGBT

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 3.

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High Voltage XPTTM IGBT Advance Technical Information IXYX50N170C VCES = 1700V IC110 = 50A V CE(sat)  3.7V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 178 A 50 A 460 A VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 200 A VCE  1360 V TC = 25°C 1500 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 /4.5..
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