IXYX50N170C Description
High Voltage XPTTM IGBT Advance Technical Information IXYX50N170C VCES = 1700V IC110 = 50A V CE(sat) 3.7V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 175°C TJ.
IXYX50N170C Key Features
- High Voltage Package
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density