Datasheet Summary
Advanced Technical Information
LKK 47-06C5
VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 m
Dual CoolMOS ™ 1) Power MOSFET mon Source Topology DCB isoated package
D1 T1
G1
T2
1 2 3 4 5
G2
D2
MOSFET T1/T2 Symbol VDSS VD1D2 VGS ID25 ID90 EAS EAR TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C TVJ = 25°C Maximum Ratings 600 ±600 ±20 47 32 1950 3 V V V A A mJ mJ
Features
- fast CoolMOS ™ 1) power MOSFET 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density
Applications
- AC...