Full PDF Text Transcription for LKK47-06C5 (Reference)
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LKK47-06C5. For precise diagrams, and layout, please refer to the original PDF.
Advanced Technical Information LKK 47-06C5 VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 m Dual CoolMOS ™ 1) Power MOSFET Common Source Topology DCB isoated package ...
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CoolMOS ™ 1) Power MOSFET Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S T2 1 2 3 4 5 1 G2 5 D2 MOSFET T1/T2 Symbol VDSS VD1D2 VGS ID25 ID90 EAS EAR TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C TVJ = 25°C Maximum Ratings 600 ±600 ±20 47 32 1950 3 V V V A A mJ mJ Features • fast CoolMOS ™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • AC Switch - power regulation of AC heating - lig
LKK47-06C5 Datasheet
