MID200-12A4
Features q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 k Hz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873
Advantages q space and weight savings q reduced protection circuits
Typical Applications q AC and DC motor control q AC servo and robot drives q power supplies q welding inverters
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MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4
Symbol
V(BR)CES VGE(th) ICES
IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff Rth JC Rth JS
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
VGE = 0 V IC = 6 m A, VCE = VGE VCE = VCES
VCE = 0 V, VGE = ±20 V IC = 150 A, VGE = 15 V
TJ = 25°C TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive...
