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MII200-12A4 - IGBT Module

Features

  • q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873 Advantages q space and weight savings q reduced protection circuits Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Modules Short Circuit SOA Capability Square RBSOA MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V V = 2.2 V CE(sat) typ. MII 3 MID 3 MDI 3 8 91 8 19 1 11 11 10 2 10 2 2 3 2 1 11 10 9 8 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Md Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive VGE= ±15 V, TJ = 125°C, RG = 6.8 W Clamped inductive load, L = 100 mH TC = 25°C 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max.
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