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Advanced Technical Information
MIO 1200-25E10
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 1200 A
VCES
= 2500 V
VCE(sat) typ. = 2.5 V
CC C C'
G
E'
EE
E
IGBT
Symbol VCES VGES IC80 ICM t
SC
Conditions VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V CC
=
1800
V;
VCEM
CHIP
=
<
2500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ①
IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
2.5 V 3.1 3.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 7.
MIO1200-25E10 Datasheet
