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MIO1500-25E10 - IGBT Module

Features

  • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC.
  • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information MIO 1500-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1500 A VCES = 2500 V VCE(sat) typ. = 2.7 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 1700 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1500 A 3000 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1500 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C Eon Inductive load; TVJ = 125°C; VGE = ±15 V; Eoff VCC = 1200V; IC = 1500A; RG = 1.
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