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MIO600-65E11 - IGBT Module

Features

  • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC.
  • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MIO 600-65E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 600 A VCES = 6500 V VCE(sat) typ = 4.2 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC85 ICM t SC Conditions VGE = 0 V TC = 85°C tp = 1 ms; TC = 85°C V= CC 4400 V; VCEM CHIP = < 6500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ‘ IC = 600 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 4.2 V 5.
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