MIO600-65E11 Datasheet IGBT Module

Manufacturer: IXYS (now Littelfuse)

MIO600-65E11 igbt module by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MIO600-65E11
Manufacturer	IXYS (now Littelfuse)
File Size	177.03 KB
Description	IGBT Module
Datasheet	MIO600-65E11 Datasheet

Overview

MIO 600-65E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 600 A VCES = 6500 V VCE(sat) typ = 4.2 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC85 ICM t SC Conditions VGE = 0 V TC = 85°C tp = 1 ms; TC = 85°C V= CC 4400 V; VCEM CHIP = < 6500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

typ.

max.

Key Features

NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC.
Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical.

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