Download MIO600-65E11 Datasheet PDF
MIO600-65E11 page 2
Page 2
MIO600-65E11 page 3
Page 3

MIO600-65E11 Description

TVJ < 125°C Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C 4.2 V 5.4 V VGE(th) IC = 240 mA; VCE = VGE 6 8V ICES VCE = 6500.

MIO600-65E11 Key Features

  • NPT³ IGBT
  • Low-loss
  • Smooth switching waveforms for good EMC
  • Industry standard package
  • High power density
  • AISiC base-plate for high power cycling capacity
  • AIN substrate for low thermal resistance

MIO600-65E11 Applications

  • AC power converters for