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MITH450PF1200LP - IGBT

Key Features

  • / Advantages:.
  • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 µsec. - low gate charge - low EMI.
  • Free wheeling diode - fast and soft reverse recovery - low operating forward voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Module Phase leg Part number MITH450PF1200LP MITH450PF1200LP tentative VCES IC25 VCE(sat) = 1200 V = 612 A = 1.75 V 76 5 T2 4 T1 D2 21 D1 3 tentative Features / Advantages: • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 µsec.