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MIXA20W1200MC - XPT IGBT

Key Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXA20W1200TML XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Six-Pack XPT IGBT Part name (Marking on product) MIXA20W1200MC MIXA20W1200MC VCES = 1200 V IC25 = 28 A VCE(sat) = 2.1 V O9 P9 L9 S18 W18 A5 E5 C5 G14 I14 K14 A1 E1 K10 C1 G10 H10 Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.