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MIXA450PF1200TSF - XPT IGBT

Key Features

  • / Advantages:.
  • High level of integration - only one power semiconductor module required for the whole drive.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • Temperature sense included.
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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XPT IGBT Module Phase leg + free wheeling Diodes + NTC Part number MIXA450PF1200TSF MIXA450PF1200TSF VCES = 2x 1200 V I C25 = 650 A V =CE(sat) 1.8 V 5 21 87 9 3 6 10/11 4 Backside: isolated Features / Advantages: ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.