MIXA60HU1200VA Description
XPT IGBT Module H~ Bridge, Buck / Boost - bination Part number MIXA60HU1200VA MIXA60HU1200VA VCES = I C25 = V =CE(sat) preliminary 1200 V 85 A 1,8 V 6 10 2 1 83 5 4.
MIXA60HU1200VA Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage