MIXA61H1200ED Description
IGBT XPT Module H Bridge Preliminary data Part name (Marking on product) MIXA 61H1200ED MIXA 61H1200ED VCES = 1200 V IC25 = 85 A VCE(sat) = 1.8 V 13 D1 D5 1 T1 9 T5 2 10 16 14 D2 D6 3 T2 11 T6 4 12 17.
MIXA61H1200ED Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
- AC motor drives