MIXA80W1200TEH Overview
Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- Rugged XPT design (Xtreme light Punch Through) results in
- short circuit rated for 10 µsec
- very low gate charge
- square RBSOA @ 3x IC
- Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
