MIXA81H1200EH Description
IGBT Module H Bridge Part name (Marking on product) MIXA81H1200EH MIXA81H1200EH VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12.
MIXA81H1200EH Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
- AC motor drives