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MIXD50W650TED - Trench XPT IGBT

Key Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXD600PF650TSF XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Six-Pack Trench XPT IGBT MIXD50W650TED VCES = 650 V IC25 = 71 A VCE(sat) typ. = 1.55 V Part name (Marking on product) MIXD50W650TED 25, 26 17 NTC 1 2 18 3 4 27, 28 5 6 7 8 9 10 11 12 15, 16 23, 24 21, 22 19, 20 13, 14 E72873 Pin configuration see outlines. tentative Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.