MKE38P600LB Description
TVJ = 25°C TVJ = 125°C VDS = 0 V; RG = 3.3 Ω 150 190 nC 35 nC 50 nC Resistive switching TVJ = 125°C VDS = 380 V; RG = 3.3 Ω 22 ns 10 ns 120 ns 12 ns 70 µJ 22 µJ Inductive switching TVJ = 25°C VDS = 380.
MKE38P600LB Key Features
- Fast CoolMOS™ 1) power MOSFET 4th generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
- low thermal resistance
- Package
- isolated surface to heatsink
- low coupling capacity between pins
- PCB space saving
- enlarged creepage towards heatsink