MKE38P600LB - Power MOSFET

IXYS (now Littelfuse)

Key Features

Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
Package - isolated surface to heatsink - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink -.

MKE38P600LB power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MKE38P600LB
Manufacturer	IXYS (now Littelfuse)
File Size	384.96 KB
Description	Power MOSFET
Datasheet	MKE38P600LB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CoolMOS™ 1) Power MOSFET ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device MKE 38P600LB ID25 = 50 A VDSS = 600 V R = DS(on) max 45 mW DC+ T1 G1 KS1 L T2 G2 KS2 DC- MOSFETs T1, T2 Symbol Conditions VDSS VGS ID25 ID80 EAS EAR dV/dt TVJ = 25°C to 150°C TC = 25°C TC = 80°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ±20 V 50 A 38 A 1950 mJ 3 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.