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CoolMOS™ 1) Power MOSFET
ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device
MKE 38P600LB
ID25
= 50 A
VDSS
= 600 V
R = DS(on) max 45 mW
DC+ T1
G1
KS1
L
T2
G2
KS2 DC-
MOSFETs T1, T2
Symbol Conditions
VDSS
VGS
ID25 ID80
EAS EAR
dV/dt
TVJ = 25°C to 150°C
TC = 25°C TC = 80°C
single pulse repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ±20 V 50 A 38 A
1950 mJ 3 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss Coss
Qg Qgs Qgd
td(on) tr td(off) tf Eon Eoff
td(on) tr td(off) tf Eon Eoff Erec(off)
RthJC RthJH
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
MKE38P600LB Datasheet
