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MKI100-12F8

MKI100-12F8 is IGBT Module manufactured by IXYS.
MKI100-12F8 datasheet preview

MKI100-12F8 Datasheet

Part number MKI100-12F8
Download MKI100-12F8 Datasheet (PDF)
File Size 82.09 KB
Manufacturer IXYS
Description IGBT Module
MKI100-12F8 page 2

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MKI100-12F8 Description

Advanced Technical Information MKI 100-12F8 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 125 A V CES = 1200 V VCE(sat) typ. non-repetitive 125 85 200 VCES 10 A A A µs TC = 25°C 640 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C I = 4 mA;.

MKI100-12F8 Key Features

  • Fast NPT IGBTs
  • low saturation voltage
  • positive temperature coefficient for easy paralleling
  • fast switching
  • short tail current for optimized performance also in resonant circuits
  • HiPerFREDTM diode
  • fast reverse recovery
  • low operating forward voltage
  • low leakage current
  • Industry Standard Package

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