MMIX1G75N250 Description
2500 V 3.0 5.0 V 50 μA 5 mA ±200 nA 2.5 2.9 V 4.1 V G E Isolated Tab C E G G = Gate C = Collector E = Emitter.
MMIX1G75N250 is High Voltage IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| MMIX1F230N20T | Power MOSFET |
| MMIX1F44N100Q3 | Power MOSFET |
| MMIX1X200N60B3H1 | Extreme Light Punch Through IGBT |
| MMIX1Y100N120C3H1 | High-Speed IGBT |
| MMIX1Y25N250CV1 | High Voltage IGBT |
2500 V 3.0 5.0 V 50 μA 5 mA ±200 nA 2.5 2.9 V 4.1 V G E Isolated Tab C E G G = Gate C = Collector E = Emitter.