Part MMIX1Y100N120C3H1
Description High-Speed IGBT
Manufacturer IXYS
Size 281.18 KB
IXYS

MMIX1Y100N120C3H1 Overview

Key Features

  • Optimized for Low Switching Losses
  • Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Isolated Mounting Surface z 2500V~ Electrical Isolation
  • Square RBSOA
  • Isolation Voltage 2500V~
  • Anti-Parallel Ultra Fast Diode
  • Positive Thermal Coefficient of Vce(sat)
  • Avalanche Rated
  • High Current Handling Capability
  • International Standard Package Advantages