MMIX1Y100N120C3H1 Description
+150 °C 300 °C 260 °C 2500 V~ 50..200/11..45 N/lb. 8 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min.
MMIX1Y100N120C3H1 is High-Speed IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| MMIX1Y25N250CV1 | High Voltage IGBT |
| MMIX1F230N20T | Power MOSFET |
| MMIX1F44N100Q3 | Power MOSFET |
| MMIX1G75N250 | High Voltage IGBT |
| MMIX1X200N60B3H1 | Extreme Light Punch Through IGBT |
+150 °C 300 °C 260 °C 2500 V~ 50..200/11..45 N/lb. 8 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min.