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MMIX1Y100N120C3H1 - High-Speed IGBT

Features

  • E = Emitter z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information MMIX1Y100N120C3H1 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 1200V 40A 3.5V 110ns C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 50/60Hz, 1 minute Mounting Force Maximum Ratings 1200 V 1200 V ±20 V ±30 V 92 A 40 A 34 A 440 A 50 A 1.2 J ICM = 200 A ≤ @VCE VCES 400 W -55 ...
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