Part MMIX1Y25N250CV1
Description High Voltage IGBT
Manufacturer IXYS
Size 261.00 KB
IXYS

MMIX1Y25N250CV1 Overview

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Isolated Heatsink Surface
  • 2500V~ Electrical Isolation
  • Anti-Parallel Diode
  • High Power Density
  • Low Gate Drive Requirement