MMIX1Y25N250CV1 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

MMIX1Y25N250CV1 high voltage igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MMIX1Y25N250CV1
Manufacturer	IXYS (now Littelfuse)
File Size	261.00 KB
Description	High Voltage IGBT
Datasheet	MMIX1Y25N250CV1 Datasheet

Overview

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0V C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load 36 A 18 A 14 A 270 A ICM = 100 A 1500 V TC = 25°C 230 W -55 ...

+175 °C 175 °C -55 ...

+175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C 50/60Hz, 1 minute 2500 V~ Mounting Force 50..200/11..45 N/lb.

Key Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Heatsink Surface.
2500V~ Electrical Isolation.
Anti-Parallel Diode.
High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = VCES, VGE = 0V Note 2, TJ = 100C 25 μA 100 μA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE(sat) IC = 25A, VGE.

More Datasheets from IXYS (now Littelfuse)

Part Number	Description
MMIX1Y100N120C3H1	High-Speed IGBT
MMIX1F230N20T	Power MOSFET
MMIX1F44N100Q3	Power MOSFET
MMIX1G75N250	High Voltage IGBT
MMIX1X200N60B3H1	Extreme Light Punch Through IGBT
MMIX2F150N20T	Power MOSFET
MMIX4B12N300	Bipolar MOS Transistor
MMIX4B20N300	Bipolar MOS Transistor
MMIX4B22N300	Monolithic Bipolar MOS Transistor
MMIX4G20N250	High Voltage IGBT