MMIX1Y25N250CV1 Description
8 g G E Isolated Tab C E G G = Gate C = Collector E = Emitter.
MMIX1Y25N250CV1 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Heatsink Surface
- 2500V~ Electrical Isolation
- Anti-Parallel Diode
- High Current Handling Capability
- High Power Density
- Low Gate Drive Requirement