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MMIX2F150N20T - Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~).
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Very Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  200V 84A 16.5m G2S G2 D2 D1 S2 S1 G1S G1 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 200 V 200 V 20 V 30 V 84 A 375 A 75 A 1.5 J 305 W 20 V/ns -55 ... +150 C 150 C -55 ...
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