Datasheet4U Logo Datasheet4U.com

MMIX2F150N20T Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

📥 Download Datasheet

Overview

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  200V 84A 16.5m G2S G2 D2 D1 S2 S1 G1S G1 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 200 V 200 V 20 V 30 V 84 A 375 A 75 A 1.5 J 305 W 20 V/ns -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 50/60 Hz, 1 Minute 2500 V~ Mounting Force 50..200 / 11..45 N/lb 8 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min.

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~).
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Very Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
MMIX1F230N20T Power MOSFET
MMIX1F44N100Q3 Power MOSFET
MMIX1G75N250 High Voltage IGBT
MMIX1X200N60B3H1 Extreme Light Punch Through IGBT
MMIX1Y100N120C3H1 High-Speed IGBT
MMIX1Y25N250CV1 High Voltage IGBT
MMIX4B12N300 Bipolar MOS Transistor
MMIX4B20N300 Bipolar MOS Transistor
MMIX4B22N300 Monolithic Bipolar MOS Transistor
MMIX4G20N250 High Voltage IGBT