MMIX2F150N20T Description
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) 200V 84A 16.5m G2S G2 D2 D1 S2 S1 G1S G1 Symbol VDSS.
MMIX2F150N20T Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power Cycling Capability
- High Isolation Voltage (2500V~)
- Fast Intrinsic Rectifier
- Avalanche Rated
- Very Low RDS(on)
- Easy to Mount
- Space Savings