MMIX4B12N300
MMIX4B12N300 is Bipolar MOS Transistor manufactured by IXYS.
Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
C1 G1 E1C3 G3
C2
G2 E2C4 G4 E3E4
Symbol Test Conditions
VCES VCGR VGES VGEM IC25 IC110 ICM
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C TC = 110°C TC = 25°C, VGE = 19V, 1ms
10ms
SSOA (RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load
TJ TJM Tstg
TL TSOLD
FC VISOL Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute
Maximum Ratings
± 20
± 30
ICM =...
