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MMIX4B12N300 - Bipolar MOS Transistor

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = 0.8.
  • VCES, VGE = 0V Note 2, TJ = 125°C 25 μA 1 mA IGES VCE = 0V, VGE = ± 20V ±100 nA V.

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Full PDF Text Transcription

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Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) MMIX4B12N300 C1 G1 E1C3 G3 C2 G2 E2C4 G4 E3E4 Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 19V, 1ms 10ms SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 26 A 11 A 98 A 52 A ICM = 98 A 1500 V 125 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 50..200 / 11..45 4000 Nm/lb.in.
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