MMIX4B20N300 Description
+150 °C 300 °C 260 °C 50..200 / 11..45 4000 Nm/lb.in.
MMIX4B20N300 Key Features
- VCES, VGE = 0V
MMIX4B20N300 is Bipolar MOS Transistor manufactured by IXYS.
| Part Number | Description |
|---|---|
| MMIX4B22N300 | Monolithic Bipolar MOS Transistor |
| MMIX4B12N300 | Bipolar MOS Transistor |
| MMIX4G20N250 | High Voltage IGBT |
| MMIX1F230N20T | Power MOSFET |
| MMIX1F44N100Q3 | Power MOSFET |
+150 °C 300 °C 260 °C 50..200 / 11..45 4000 Nm/lb.in.