MMIX4B22N300 Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B22N300 C1 C2 (Electrically Isolated Tab) G1 E1C3 G3 G2 E2C4 G4 E3E4 Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL.
MMIX4B22N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density