MMIX4B22N300
MMIX4B22N300 is Monolithic Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
C1
C2
(Electrically Isolated Tab)
G1 E1C3
G3
G2 E2C4
G4 E3E4
Symbol Test Conditions
Maximum Ratings
VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC TJ TJM Tstg TL TSOLD FC VISOL Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
3000 3000 ± 20 ± 30
TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load
VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C
38 22 165 ICM = 180 VCES 1500
10 150 -55 ... +150 150 -55 ... +150
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting...
