Part MMIX4B22N300
Description Monolithic Bipolar MOS Transistor
Category Transistor
Manufacturer IXYS
Size 238.05 KB
IXYS

MMIX4B22N300 Overview

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Isolated Mounting Surface
  • 4000V~ Electrical Isolation
  • High Blocking Voltage
  • High Peak Current Capability
  • Low Saturation Voltage Advantages
  • Low Gate Drive Requirement
  • High Power Density