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MMIX4G20N250 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Peak Current Capability.
  • Low Saturation Voltage.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • High Power Density.
  • Easy to Mount.

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Full PDF Text Transcription

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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C TC = 90°C T = 25°C, V = 19V, 1ms C GE 10ms VGE= 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 23 A 14 A 105 A 55 A ICM = 60 A 1500 V 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 260 °C 50..200 / 11..45 Nm/lb.in.
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