MMIX4G20N250 Description
+150 °C 260 °C 50..200 / 11..45 Nm/lb.in.
MMIX4G20N250 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Peak Current Capability
- Low Saturation Voltage
- Molding Epoxies Meet UL 94 V-0
- High Power Density -Easy to Mount