MMJX1H40N150 Datasheet 1500V MOS Gated Thyristor

Manufacturer: IXYS (now Littelfuse)

MMJX1H40N150 1500v mos gated thyristor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MMJX1H40N150
Manufacturer	IXYS (now Littelfuse)
File Size	266.81 KB
Description	1500V MOS Gated Thyristor
Download	MMJX1H40N150 Download (PDF)

Overview

1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 50/60Hz, 1 minute Mounting Force Maximum Ratings 1500 V ±30 V ±40 V 15.5 kA 6.4 kA 320 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 300 °C 260 °C 2500 V~ 50..200/11..45 N/lb 5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500V, VGK = 0V IL IH IGKS VAK = 0V, VGK = 30V TJ = 125C Characteristic Values Min.

Key Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
Very High Current Capability Advantages.
High Power Density.
Low Gate Drive Requirement.

More Datasheets from IXYS (now Littelfuse)

Part Number	Description