MMJX1H40N150 Description
1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C.
MMJX1H40N150 Key Features
- Silicon Chip on Direct-Copper Bond
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Very High Current Capability
- High Power Density
- Low Gate Drive Requirement