MMJX1H40N150
Features
- Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Very High Current Capability
Advantages
- High Power Density
- Low Gate Drive Requirement
Applications
- Capacitive Discharge Circuits
- Ignition Circuits
- Solid State Surge Protection
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DS100594C(12/17)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)
Ciks Coks Crks
VAK = 25V, VGK = 0V, f = 1MHz
Qg(on) Qgk Qga
IC = 40A, VGK = 15V, VAK = 600V tri
Capacitive Discharge, TJ = 25°C td
IA = 2000A, VGK = 15V, RG = 1 VAK = 1000V, L < 20n H, Notes 2 & 3 tri
Capacitive Discharge, TJ = 125°C
IA = 2000A, VGK = 15V, RG = 1 td
VAK = 1000V, L < 20n H, Notes 2 & 3
Rth JC
Rth CS Rth JA
Characteristic Values
Min.
Typ. Max.
2825 p F
164 p F
50 p F
99 n C
22 n C
36 n C
100 ns
50 ns
100 ns
50...
