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MMJX1H40N150 - 1500V MOS Gated Thyristor

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Very High Current Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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    Full PDF Text Transcription

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    1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 50/60Hz, 1 minute Mounting Force Maximum Ratings 1500 V ±30 V ±40 V 15.5 kA 6.4 kA 320 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 2500 V~ 50..200/11..
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