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Three phase full Bridge
with Trench MOSFETs in DCB-isolated high-current package
MTI145WX100GD
VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW
Part number MTI145WX100GD
L1+ L2+ G1 G3 G5 S1 S3 S5
L1 L2 G2 G4 G6 S2 S4 S6
L1- L2-
Features / Advantages:
• MOSFETs in trench technology: −−low RDSon −−optimized intrinsic reverse diode
• Package: −−high level of integration −−high current capability −−aux.