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MTI200WX75GD - Three phase full Bridge

Key Features

  • / Advantages:.
  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - high current capability - aux. terminals for MOSFET gate control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer.
  • Space and weight savings.
  • High current capability.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MTI145WX100GD Three phase full Bridge
MTI85W100GC Three phase full Bridge

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI200WX75GD VDSS = 75 V ID25 = 255 A RDSon typ. = 1.1 mW Part number MTI200WX75GD T1 G1 S1 T2 G2 S2 L1+ T3 G3 S3 L1 T4 G4 S4 L1- L2+ T5 G5 S5 L2 T6 G6 S6 L2- L3+ Surface Mount Device L3 L3- Features / Advantages: • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux.