MTI200WX75GD Description
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI200WX75GD VDSS = 75 V ID25 = 255 A RDSon typ.
MTI200WX75GD Key Features
- MOSFETs in trench technology
- low RDSon
- optimized intrinsic reverse diode
- package
- high level of integration
- high current capability
- aux. terminals for MOSFET gate control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- Space and weight savings