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MTI85W100GC - Three phase full Bridge

Key Features

  • / Advantages:.
  • MOSFETs in trench technology:.
  • low RDSon.
  • optimized intrinsic reverse diode.
  • Package:.
  • high level of integration.
  • high current capability (300 A max. ).
  • aux. terminals for MOSFET control.
  • terminals for soldering or welding connections.
  • isolated DCB ceramic base plate with optimized heat transfer.
  • Space and weight savings.

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Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI85W100GC VDSS = 100 V ID25 = 120 A R = DSon typ. 3.2 mW Part number MTI85W100GC G3 G5 G1 S3 S5 S1 G4 G6 G2 S4 S6 S2 Features / Advantages: • MOSFETs in trench technology: −−low RDSon −−optimized intrinsic reverse diode • Package: −−high level of integration −−high current capability (300 A max.) −−aux.