MTI85W100GC Description
Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI85W100GC VDSS = 100 V ID25 = 120 A R = DSon typ.
MTI85W100GC Key Features
- MOSFETs in trench technology: --low RDSon --optimized intrinsic reverse diode
- Package: --high level of integration --high current capability (300 A max.) --aux. terminals for MOSFET control --termin
- Space and weight savings