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Three phase full Bridge
with Trench MOSFETs in DCB-isolated high-current package
MTI85W100GC
VDSS = 100 V
ID25
= 120 A
R = DSon typ. 3.2 mW
Part number MTI85W100GC
G3
G5
G1
S3
S5
S1
G4
G6
G2
S4
S6
S2
Features / Advantages:
• MOSFETs in trench technology: −−low RDSon −−optimized intrinsic reverse diode
• Package: −−high level of integration −−high current capability (300 A max.) −−aux.