MUBW35-12A8 Overview
sine 50 Hz TC = 25°C Maximum Ratings 1600 V 30 A 80 A 300 A 100 W Symbol Conditions VF I R RthJC IF = 35 A; TVJ = 25°C TVJ = 125°C V R = V; RRM TVJ = 25°C TVJ = 125°C (per diode) Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
MUBW35-12A8 Key Features
- High level of integration
- only one power semiconductor module required for the whole drive
- NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
- Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
- Industry standard package with insulated copper base plate and soldering pins for PCB mounting
- Temperature sense included