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MWI100-06A8 - IGBT Modules

Features

  • VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C non-repetitive TC = 25°C NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages.

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Full PDF Text Transcription

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MWI 100-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 130 A = 600 V VCES VCE(sat) typ. = 2.0 V Preliminary data 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 130 88 ICM = 200 VCEK ≤ VCES 10 410 V V A A A µs W Features ● ● ● ● ● ● ● ● ● ● ● VCE = VCES; VGE = ±15 V; RG = 2.
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