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MWI100-12A8 - IGBT Module

Features

  • €€NPT IGBT technology €€low saturation voltage €€low switching losses €€switching frequency up to 30 kHz €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for easy parallelling €€MOS input, voltage controlled €€ultra fast free wheeling diodes €€solderable pins for PCB mounting €€package with copper base plate Advantages €€space savings €€reduced protection circuits €€package designed for wave soldering Typical.

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MWI 100-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 160 A VCES = 1200 V VCE(sat) typ. = 2.2 V 13, 21 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 1 2 3 4 14, 20 59 6 10 7 11 8 12 19 17 15 Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C 160 110 VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 200 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 6.8 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 640 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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