Download MWI100-12E8 Datasheet PDF
MWI100-12E8 page 2
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MWI100-12E8 page 3
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MWI100-12E8 Description

non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 165 115 200 VCES 10 640 V V A A A µs.

MWI100-12E8 Key Features

  • NPT3 IGBTs
  • low saturation voltage
  • positive temperature coefficient for easy paralleling
  • fast switching
  • short tail current for optimized performance also in resonant circuits
  • HiPerFREDTM diode
  • fast reverse recovery
  • low operating forward voltage
  • low leakage current
  • Industry Standard Package