MWI225-12E9 Description
TVJ = 125°C Clamped inductive load; VCEmax < VCES TC = 25°C Maximum Ratings 1200 V ± 20 V 355 250 ICM = 500 VCEK < VCES 10 A A A µs 1.4 kW Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600.
MWI225-12E9 Key Features
- NPT3 IGBT technology
- low saturation voltage
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- MOS input, voltage controlled
- ultra fast free wheeling diodes
- solderable pins for PCB mounting
- package with copper base plate
- space savings