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MWI225-17E9 - IGBT Module

Features

  • €€NPT3 IGBT technology €€low saturation voltage €€low switching losses €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for easy parallelling €€MOS input, voltage controlled €€ultra fast free wheeling diodes €€solderable pins for PCB mounting €€package with copper base plate Advantages €€space savings €€reduced protection circuits €€package designed for wave soldering Typical.

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Full PDF Text Transcription

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Advanced Technical Information MWI 225-17E9 IGBT Modules Sixpack NPT3 IGBT IC80 = 235 A VCES = 1700 V VCE(sat)typ. = 2.5 V 2 46 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) I CES IGES td(on) tr td(off) t f Eon E off Cies QGon RthJC 15 28 16 17 29 13 14 20 21 22 11/12 18 19 1 25 26 27 9/10 23 24 3 7/8 5 Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 1200 V; VGE = ±15 V; RG = 5 Ω; TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum Ratings 1700 V ± 20 V 335 A 235 A ICM = 470 VCEK ≤ VCES 10 A µs 1.4 kW Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max.
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