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MWI25-12E7 - IGBT Module

Features

  • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits.
  • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current.
  • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
MWI25-12A7 IGBT Module
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Full PDF Text Transcription

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MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 52 A VCES = 1200 V VCE(sat) typ. = 1.9 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 1 59 2 6 10 3 7 11 4 8 12 17 16 15 14 E72873 See outline drawing for pin arrangement Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 39 Ω; TVJ = 125°C SCSOA; non-repetitive 52 36 70 VCES 10 A A A µs TC = 25°C 225 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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