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MWI300-12E9 - IGBT Module

Features

  • NPT3 IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate Advantages.
  • space savings.
  • reduced protection circuits.
  • package designe.

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Full PDF Text Transcription

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MWI 300-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10 23 24 3 IC80 = 375 A VCES = 1200 V VCE(sat) typ. = 2.0 V 6 7/8 E72873 5 See outline drawing for pin arrangement phase-out IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum Ratings 1200 V ± 20 V 530 375 ICM = 750 VCEK < VCES 10 A A A µs 2.1 kW Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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