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MWI35-12A7 - IGBT Module

Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • switching frequency up to 30 kHz.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate Advantages.
  • space savings.
  • reduced protection circuits.
  • package designed for wave sol.

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Full PDF Text Transcription

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MWI 35-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 3 4 17 59 6 10 7 11 8 12 IC25 = 62 A VCES = 1200 V VCE(sat) typ. = 2.2 V 16 15 14 E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C 62 44 VGE = ±15 V; RG = 39 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 70 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 39 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 280 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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