- NPT3 IGBT technology - low saturation voltage - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient
for easy parallelling - MOS input, voltage controlled - ultra fast free wheeling diodes - solderable pins for PCB mounting - package with copper base plate
Advantages
- space savings - reduced protection circuits - package designed for wave soldering
Symbol
Conditions
Characteristic Values
(T VJ
=
25°C,
unless
otherwise
spe.
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MWI 451-17 E9
IGBT Modules Sixpack
IC60 = 475 A VCES = 1700 V VCE(sat) typ = 2.25 V
Preliminary data
2 46
phase-out
IGBTs
Symbol VCES VGES IC25 IC60 IC80 RBSOA
tSC (SCSOA) Ptot
15 28
16 17
29 13 14
20 21 22
11/12
18 19
1
25 26 27
9/10
23 24
3
7/8 5
Conditions
TVJ = 25°C to 125°C
TC = 25°C TC = 60°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 1200 V; VGE = ±15 V; RG = 3.3 Ω; TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C
Maximum Ratings
1700
V
± 20 V
580 A 475 A 405 A
ICM = 750 VCEK ≤ VCES
10
A µs
2.
MWI451-17E9 Datasheet
