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MWI50-06A7 Datasheet IGBT Module

Manufacturer: IXYS (now Littelfuse)

Overview: MWI 50-06 A7 MWI 50-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Type: MWI 50-06 A7 MWI 50-06 A7T NTC - Option: without NTC with NTC 13 1 2 3 4 17 IC25 = 72 A V CES = 600 V VCE(sat) typ. = 1.9 V 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 72 50 VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 100 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 22 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 225 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 1 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 1.9 2.4 V 2.2 V 4.5 6.5 V 0.6 mA 0.7 mA 200 nA 50 ns 60 ns 300 ns 30 ns 2.3 mJ 1.7 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) 2800 120 pF nC 0.

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • switching frequency up to 30 kHz.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate Advantages.
  • space savings.
  • reduced protection circuits.
  • package designed for wave sol.

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