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MWI50-12A7T Datasheet IGBT Module

Manufacturer: IXYS (now Littelfuse)

Overview: MWI 50-12 A7 MWI 50-12 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Type: MWI 50-12 A7 MWI 50-12 A7T NTC - Option: without NTC with NTC 13 1 2 3 4 17 59 6 10 7 11 8 12 IC25 = 85 A V CES = 1200 V VCE(sat) typ. = 2.2 V T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C 85 60 VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 100 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 22 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 350 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 2 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 2.2 2.7 V 2.5 V 4.5 6.5 V 4 mA 3 mA 200 nA 100 ns 70 ns 500 ns 70 ns 7.6 mJ 5.6 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 50 A (per IGBT) 3300 230 pF nC 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • switching frequency up to 30 kHz.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate Advantages.
  • space savings.
  • reduced protection circuits.
  • package designed for wave sol.

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