R3636EC20P Description
Tsink=85°C (note 2) Maximum average on-state current. Tsink=85°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 2) D.C.
R3636EC20P is Distributed Gate Thyristor manufactured by IXYS.
| Part Number | Description |
|---|---|
| R3636EC20K | Distributed Gate Thyristor |
| R3636EC20L | Distributed Gate Thyristor |
| R3636EC20M | Distributed Gate Thyristor |
| R3636EC20N | Distributed Gate Thyristor |
| R3636EC20R | Distributed Gate Thyristor |
Tsink=85°C (note 2) Maximum average on-state current. Tsink=85°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 2) D.C.