IXYS SN35N120AU1
High Voltage 1 GBT with Diode
| Part No. | SN35N120AU1 |
|---|---|
| Datasheet | SN35N120AU1 Download |
| Manufacturer |  IXYS |
| Description | High Voltage 1 GBT with Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 175 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W W V~ V~ °C °C °C miniBLOC, SOT-227 B 1 2 4 3 1 = Emitter , 2 = Gate, 3 = Collector 4 = Emitter Either Emitter terminal can be used as Main or Kelvin EmitterFEATURES
q q q q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g q International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nAAPPLICATIONS
q q BVCES VGE(th) ICESÿ IGES VCE(sat) IC IC = 5 mA, VGE = 0 V...
