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SS150TI60110 - Silicon Carbide Schottky Diode

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IXYS

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SS150TI60110 Silicon Carbide Schottky Diode by IXYS - Datasheet Preview — Datasheet preview – SS150TI60110

Datasheet Details

Part number	SS150TI60110
Manufacturer	IXYS
File Size	187.56 KB
Description	Silicon Carbide Schottky Diode
Datasheet	SS150TI60110 Datasheet
Note	This datasheet PDF includes multiple part numbers: SS150TI60110, SS150TA60110. Please refer to the document for exact specifications by model.
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Product details

Features

Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device).
600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF.

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Other Datasheets by IXYS

SS150TA60110 - Silicon Carbide Schottky Diode
SS150TC60110 - Silicon Carbide Schottky Diode

Published: Aug 31, 2013 |