Click to expand full text
Date:- 5 Sep, 2019 Data Sheet Issue:- P1
Tentative Data
Insulated Gate Bi-Polar Transistor Type T0285NC33E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS 3300 1800 ±20
UNITS
V V V
IC ICRM IECO PMAX Tj op Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 1.5µH.
MAXIMUM LIMITS 285 570 285 1.
T0285NC33E Datasheet
