Click to expand full text
Date:- 25 Feb, 2015 Data Sheet Issue:- P1
Prospective data
Insulated Gate Bi-Polar Transistor
Type T0385HF65E
Absolute Maximum Ratings
VCES VCES VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS 6500 6500 6000 3600 ±20
UNITS
V V V V V
IC ICRM ICEO PMAX Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range.
MAXIMUM LIMITS 385 770 385 4.
T0385HF65E Datasheet
