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T0570VD25G - Insulated Gate Bi-Polar Transistor

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Part number T0570VD25G
Manufacturer IXYS
File Size 405.62 KB
Description Insulated Gate Bi-Polar Transistor
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Date:- 4 Sep, 2015 Data Sheet Issue:- A1 Advance data Insulated Gate Bi-Polar Transistor Type T0570VD25G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range.
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