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T0600AF65G - Insulated Gate Bi-Polar Transistor

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Part number T0600AF65G
Manufacturer IXYS
File Size 940.93 KB
Description Insulated Gate Bi-Polar Transistor
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Date:- 27 Feb, 2015 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0600AF65G Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate.
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