IXYS T0600AF65G
Insulated Gate Bi-Polar Transistor
| Part No. | T0600AF65G |
|---|---|
| Datasheet | T0600AF65G Download |
| Manufacturer |  IXYS |
| Description | Insulated Gate Bi-Polar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. MAXIMUM LIMITS 600 1200 600 1200 4910 5400 7.1 2000 -40 to +125 -40 to +125 UNITS A A A A A A KW A/µs °C °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 430nH.
