IXYS T0850VB25E
Insulated Gate Bi-Polar Transistor
| Part No. | T0850VB25E |
|---|---|
| Datasheet | T0850VB25E Download |
| Manufacturer |  IXYS |
| Description | Insulated Gate Bi-Polar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tjop Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. Notes: - 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) The use of an anti-parallel diode is recommended. MAXIMUM LIMITS 850 1700 850 4.4 -40 to +125 -40 to +125 UNITS A A A kW °C °C Prospective Data Sheet T0850VB25E Issue P1 Page 1 of 6 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T08
